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Dual High Side Switch Controller Circuit Diagram One of the most frequent uses of n-channel MOSFET’s is as a voltage controlled switch. To ensure that the MOSFET delivers the full supply voltage to the load it is necessary for the gate voltage to be a few volts above the supply voltage level. This can be a problem if no other suitable higher volt-age sources are available for use elsewhere in the circuit. The LTC 1982 dual high-side switch controller from Lin-ear Technology (www.linear-tech.com) solves this problem by incorporating a voltage tripler circuit in the gate driver stage. The gate voltage is limited to +7.5 V which is 2.0 V above the IC’s maximum operating voltage. It can directly drive the gate of logic-level MOSFET with a VGS(th) from 1.0 V to 2.0 V. A suitable n-channel logic level MOSFET would be the BSP 295. This device can switch up to 1.5 A and is available in an SOT 233 SMD package. http://streampowers.blogspot.com/2012/06/dual-high-side-switch-controller.html ...

I had previously shown how to drive N-channel MOSFETs in low-side configuration. You can find the tutorial here: http://www.blogspot.com/2016/12/low-side-mosfet-drive-circuits-and_23.html I’ve been requested to write a tutorial/article regarding high-side MOSFET drive. So, here I’ll talk about N-channel MOSFET high-side drive. Let’s first look at the common low side configuration.  Fig. 1 - N-channel MOSFET configured as low-side switch Now let’s look at a MOSFET configured as a high-side switch. Fig. 2 - N-channel MOSFET configured as high-side switch You can quite easily see the difference between the high-side configuration and the low-side configuration. In the low-side configuration, the load is connected between the drain and +V, while the source is connected to ground. Thus, the gate drive is referenced to ground. So by applying a voltage of >7V (for Power MOSFETs) or >4V (for Logic Level MOSFETs), the MOSFET can be fully turned on. Now let’s talk about the high-side c...